Of opening a bandgap in graphene by using bilayer graphene and graphene Thus, the report also reviews different ways Semimetallic, with a zero bandgap, which is troublesome in the context ofĭigital electronics applications. One of the challengesĪssociated with realizing graphene transistors is that graphene is Synthesize graphene, such as mechanical exfoliation, chemical vapor deposition,Īnd epitaxial growth are reviewed and compared. This report reviews the physics and electronic properties of graphene in theĬontext of graphene transistor implementations. Up to $2 \times 10^5$ cm$^2$ V$^$ in suspended graphene samples. Remarkable electronic properties, with observed electronic mobilities reaching Well as realizing field effect transistors for terahertz detection, due to its Key potential candidate for replacing silicon in existing CMOS technology as Including medical imaging and security scanning. Moreover, existing technology is insufficient for implementing terahertzĭetectors and receivers, which are required for a number of applications ![]() The need for post-silicon technology in industry is becoming more apparent. Download a PDF of the paper titled Graphene Field Effect Transistors: A Review, by Mohamed Warda and 1 other authors Download PDF Abstract: The past decade has seen rapid growth in the research area of graphene and
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